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| DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 PMEM4020ND NPN transistor/Schottky-diode module Product specification 2003 Nov 10 Philips Semiconductors Product specification NPN transistor/Schottky-diode module FEATURES * 600 mW total power dissipation * High current capability * Reduces required PCB area * Reduced pick and place costs * Small plastic SMD package. Transistor: * Low collector-emitter saturation voltage. Diode: * Ultra high-speed switching * Very low forward voltage * Guard ring protected. APPLICATIONS * DC-to-DC converters * Inductive load drivers * MOSFET drivers. DESCRIPTION Combination of an NPN transistor with low VCEsat and high current capability and a planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package. PNP complement: PMEM4020PD. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMEM4020ND - DESCRIPTION plastic surface mounted package; 6 leads Marking code: B6. handbook, halfpage 6 PMEM4020ND PINNING PIN 1 2 3 4 5 6 emitter not connected cathode anode base collector DESCRIPTION 5 4 4 5 1 3 6 1 2 3 MGU865 Fig.1 Simplified outline (SOT457) and symbol. VERSION SOT457 2003 Nov 10 2 Philips Semiconductors Product specification NPN transistor/Schottky-diode module LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL NPN transistor VCBO VCEO VEBO IC collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) open emitter open base open collector note 1 note 2 note 3 Ts 55 C; note 4 ICM IBM Ptot peak collector current peak base current total power dissipation Tamb 25 C; note 1 Tamb 25 C; note 2 Tamb 25 C; note 3 Ts 55 C; note 4 Tj VR IF IFSM Ptot junction temperature Schottky barrier diode continuous reverse voltage continuous forward current non-repetitive peak forward current total power dissipation t = 8.3 ms square wave Tamb 25 C; note 1 Tamb 25 C; note 2 Tamb 25 C; note 3 Ts 55 C; note 4 Tj Ptot Tstg Tamb Notes junction temperature note 2 Tamb = 25 C; note 2 note 2 Combined device total power dissipation storage temperature operating ambient temperature - -65 -65 - - - - - - - - - - - - - - - - - - - - - - PARAMETER CONDITIONS PMEM4020ND MIN. MAX. UNIT 40 40 5 0.95 1.30 1.65 2.0 3 1 295 400 500 1000 150 V V V A A A A A A mW mW mW mW C V A A mW mW mW mW C mW C C 20 1 5 295 400 500 1000 150 600 +150 +150 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT457. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pads for collector and cathode both 1 cm2. 3. Device mounted on a ceramic printed-circuit board, single-sided copper; tinplated; standard footprint. 4. Solder point of collector or cathode tab. 2003 Nov 10 3 Philips Semiconductors Product specification NPN transistor/Schottky-diode module THERMAL CHARACTERISTICS SYMBOL Single device Rth j-s Rth j-a thermal resistance from junction to solder point thermal resistance from junction to ambient in free air; notes 1 and 2 in free air; notes 1 and 3 in free air; notes 1 and 4 in free air; notes 1 and 5 Combined device Rth j-a Notes thermal resistance from junction to ambient in free air; notes 1 and 3 PARAMETER CONDITIONS PMEM4020ND VALUE UNIT 95 250 315 425 K/W K/W K/W K/W 208 K/W 1. For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF (AV) rating will be available on request. 2. Solder point of collector or cathode tab. 3. Device mounted on a ceramic printed-circuit board; single-sided copper; tinplated; standard footprint. 4. Device mounted on a FR4 printed-circuit board, single-sided copper; tinplated; mounting pad for collector and cathode 1 cm2/each. 5. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT457. 2003 Nov 10 4 Philips Semiconductors Product specification NPN transistor/Schottky-diode module ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL NPN transistor ICBO ICEO IEBO hFE collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current current gain (DC) VCB = 40 V; IE = 0 VCB = 40 V; IE = 0; Tamb = 150 C VCE = 30 V; IB = 0 VEB = 5 V; IC = 0 VCE = 5 V; IC = 1 mA VCE = 5 V; IC = 500 mA VCE = 5 V; IC = 1 A VCE = 5 V; IC = 2 A; note 1 VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 1 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA IC = 2 A; IB = 200 mA VBEsat RCEsat VBEon fT Cc base-emitter saturation voltage equivalent on-resistance base-emitter turn-on voltage transition frequency collector capacitance IC = 1 A; IB = 100 mA IC = 1 A; IB = 100 mA; note 1 VCE = 5 V; IC = 1 A IC = 50 mA; VCE = 10 V; f = 100 MHz VCB = 10 V; IE = 0; ie = 0; f = 1 MHz - - - - 300 300 200 75 - - - - - - - 150 - PARAMETER CONDITIONS MIN. PMEM4020ND TYP. - - - - - - - - - - - - - 150 - - - MAX. UNIT 100 50 100 100 - 900 - - 75 100 190 400 1.2 190 1.1 - 10 nA A nA nA mV mV mV mV V m V MHz pF Schottky barrier diode VF continuous forward voltage see Fig.2; note 1 IF = 10 mA IF = 100 mA IF = 1000 mA IR reverse current see Fig.3; note 1 VR = 5 V VR = 8 V VR = 15 V Cd Note 1. Pulse test: tp 300 s; 0.02. diode capacitance VR = 5 V; f = 1 MHz; see Fig.4 - - - - 5 7 10 19 10 20 50 25 A A A pF - - - 240 300 480 270 350 550 mV mV mV 2003 Nov 10 5 Philips Semiconductors Product specification NPN transistor/Schottky-diode module GRAPHICAL DATA 103 handbook, halfpage IF (mA) 102 MLE230 PMEM4020ND 105 handbook, halfpage IR (A) (1) MHC312 104 103 (2) (1) (2) (3) 102 (3) 10 10 1 0 100 200 300 400 500 VF (mV) 1 0 5 10 15 20 VR (V) 25 Schottky barrier diode. (1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C. Schottky barrier diode. (1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C. Fig.2 Forward current as a function of forward voltage; typical values. Fig.3 Reverse current as a function of reverse voltage; typical values. handbook, halfpage handbook, halfpage 1000 MHC077 80 MHC313 hFE (1) Cd (pF) 60 800 600 (2) 40 400 (3) 200 20 0 10-1 0 0 5 10 15 VR (V) 20 NPN transistor; VCE = 5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. 1 10 102 103 104 IC (mA) Schottky barrier diode; f = 1 MHz; Tamb = 25 C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. Fig.5 DC current gain as a function of collector current; typical values. 2003 Nov 10 6 Philips Semiconductors Product specification NPN transistor/Schottky-diode module PMEM4020ND handbook, halfpage 10 MHC078 103 handbook, halfpage VCEsat (mV) MHC079 VBE (V) 102 (1) 1 (1) (2) (2) (3) 10 (3) 10-1 10-1 1 10 102 103 104 IC (mA) 1 1 10 102 103 IC (mA) 104 NPN transistor; VCE = 5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. NPN transistor; IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.6 Base-emitter voltage as a function of collector current; typical values. Fig.7 Collector-emitter saturation voltage as a function of collector current; typical values. 102 handbook, halfpage RCEsat () MHC080 handbook, halfpage 400 MHC081 fT (MHz) 300 10 200 1 (1) (2) (3) 100 10-1 10-1 1 10 102 103 104 IC (mA) 0 0 200 400 600 800 1000 IC (mA) NPN transistor; IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. NPN transistor; VCE = 10 V. Fig.8 Equivalent on-resistance as a function of collector current; typical values. Fig.9 Transition frequency as a function of collector current. 2003 Nov 10 7 Philips Semiconductors Product specification NPN transistor/Schottky-diode module APPLICATION INFORMATION PMEM4020ND handbook, halfpage VCC V handbook, halfpageIN VOUT CONTROLLER Rload MLE231 MDB577 IN Fig.10 DC-to-DC converter. Fig.11 Inductive load driver (relays, motors, buzzers) with free-wheeling diode. 2003 Nov 10 8 Philips Semiconductors Product specification NPN transistor/Schottky-diode module PACKAGE OUTLINE Plastic surface mounted package; 6 leads PMEM4020ND SOT457 D B E A X y HE vMA 6 5 4 Q pin 1 index A A1 c 1 2 3 Lp e bp wM B detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 0.1 0.013 bp 0.40 0.25 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT457 REFERENCES IEC JEDEC EIAJ SC-74 EUROPEAN PROJECTION ISSUE DATE 97-02-28 01-05-04 2003 Nov 10 9 Philips Semiconductors Product specification NPN transistor/Schottky-diode module DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION PMEM4020ND This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003 Nov 10 10 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/01/pp11 Date of release: 2003 Nov 10 Document order number: 9397 750 11906 |
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